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Stoichiometric control of electrical transport properties in LaAlO<sub>3</sub>-SrTiO<sub>3</sub> interfaces

ORAL

Abstract

SrTiO3-based conducting interfaces, which exhibit coexistence of gate-tunable 2D superconductivity and strong Rashba spin-orbit coupling (RSOC), are candidates to host topological superconductive phases. Yet, superconductivity is usually in the dirty limit, which tends to suppress nonconventional pairing and therefore challenges these expectations. Here we report on LaAlO3/SrTiO3 interfaces with remarkably large mobility and mean free paths comparable to the superconducting coherence length, approaching the clean limit for superconductivity. By exploiting small variations of the La/Al chemical ratio we can fine-tune systematically the carrier density, mobility and the formation of the superconducting condensate. Interestingly, we find a region in the phase diagram where the critical temperature is not suppressed below the Lifshitz transition, at odds with predictions from Bardeen–Cooper–Schrieffer theory. These findings point out the relevance of achieving a clean-limit regime to enhance the observation of unconventional pairing mechanisms in these systems.

Presenters

  • Alexei Kalabukhov

    Chalmers University of Technology

Authors

  • Alexei Kalabukhov

    Chalmers University of Technology

  • Gyanendra Singh

    Institut de Ciencia de Materials de Barcelona

  • Roger Guzman

    School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China

  • Guilhem Saiz

    Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, France

  • Wu Zhou

    School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China

  • Jaume Gazquez

    Institut de Ciencia de Materials de Barcelona, Institute for Materials Science of Barcelona ICMAB-CSIC

  • Fereshteh Masoudinia

    Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193, Bellaterra, Catalonia, Spain

  • Dag Winkler

    Department of Microtechnology and Nanoscience - MC2, Chalmers University of Technology, SE 412 96, Gothenburg, Sweden

  • Tord C Claeson

    Chalmers Univ of Tech

  • Jordi Fraxedas

    Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, 08193, Spain

  • Nicolas Bergeal

    Yale University

  • Gervasi Herranz

    Consejo Superior de Investigaciones Cientificas (CSIC), Institute for Materials Science of Barcelona ICMAB-CSIC