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Anomalous Hall effect and superconductivity in BN-aligned magic-angle twisted bilayer graphene

ORAL

Abstract

Magic-angle twisted bilayer graphene (MATBG) hosts many exotic electronic states due to its combination of strong electron-electron correlations and band topology. Results published in 2019 reveal that MATBG, when tuned to a charge carrier density of 3 electrons per moire cell (ν=+3), exhibits a quantum anomalous Hall effect, but not the canonical superconducting state typically observed near ν=+2 [1,2]. These results are likely explained by the added moire potential of an aligned BN which breaks inversion symmetry, gapping the otherwise protected Dirac cones of MATBG [3,4].

Using atomic force microscopy based techniques, we verify BN alignment in a MATBG heterostructure prior to device fabrication. Subsequent transport measurements of a fabricated device reveal an anomalous Hall effect when filling 1 electron or hole per moire cell (ν=±1). The anomalous Hall signal is comparable in both fillings, in contrast to earlier studies showing a strong particle-hole asymmetry. Additionally, we find hints of superconductivity near ν=2 despite the BN-induced inversion symmetry breaking, suggesting superconductivity and the quantum anomalous Hall effect might coexist in the same device.

[1] A. L. Sharpe et al, Science 365, 605 (2019)

[2] M. Serlin et al, Science 367, 900 (2020)

[3] D. Mao and T. Senthil, Phys. Rev. B 103, 115110 (2021)

[4] J. Shi, J. Zhu, and A. H. MacDonald, Phys. Rev. B 103, 075122 (2021)

Presenters

  • Skandaprasad V Rao

    MIT, Department of Physics

Authors

  • Skandaprasad V Rao

    MIT, Department of Physics

  • Aaron L Sharpe

    Stanford Institute for Materials & Energy Sciences, Stanford University, Stanford University

  • Takuya Iwasaki

    National Institute for Materials Science

  • Deepika Kumawat

    MIT, Department of Physics, Mount Holyoke College

  • Antonio B Benitez-Moreno

    MIT

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Pablo Jarillo-Herrero

    Massachusetts Institute of Technology