Tuning of electronic structure by uniaxial strain in 1T-TaS₂: an ARPES study

The application of pressure is a powerful technique for realizing quantum phase transitions, but the electronic states involved in such transitions are often not well understood experimentally. In particular, conducting angle-resolved photoemission spectroscopy (ARPES) under pressure remains challenging. In this study, we have developed a device capable of applying uniaxial strain corresponding to a lattice strain of approximately 1.5%. This device enables in-situ adjustment of pressure within the ARPES measurement system and features a compact design suitable for use in ARPES systems at synchrotron radiation facilities. Using this device, we have investigated the effects of uniaxial pressure on the electronic structure of the transition metal dichalcogenide 1T-TaS₂.

In this talk, we will report on the detailed evolution of the electronic structure under uniaxial pressure and discuss the origin of the observed insulator-to-metal transition. Furthermore, we will discuss the implications of our observations in relation to the origin of the insulating phase in unpressurized 1T-TaS₂.