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Investigating the electronic structure of bilayer graphene/RuCl<sub>3 </sub>heterostructure

ORAL

Abstract

Stacking two-dimensional(2D) materials to form Van der Waals (vdW) heterostructures provides an unprecedented ability to tune electronic structures and engineer novel interfaces. Among these materials, α-RuCl3 has recently attracted significant attention as a Mott insulator, and interfacing with graphene induces massive charge transfer from the Graphene layer to itself, significantly modifying graphene’s electronic properties. By employing angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES), we study the electronic structure of bilayer graphene(BG) when interfaced with α-RuCl3 and hexagonal boron nitride(hBN) and further tune the Fermi level of the heterostructure via potassium atom deposition. Our experiment reveals the presence of semi-metallic states at Dirac point in BG/RuCl3 /hBN as a result of AA+AB stacking and gap (Δ~0.4 eV) opens up in BG/hBN due to sublattice symmetry breaking.

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Presenters

  • Aalok Tiwari

    Carnegie Mellon University

Authors

  • Aalok Tiwari

    Carnegie Mellon University

  • SOUVIK SASMAL

    Carnegie Mellon University

  • I-Hsuan Kao

    Carnegie Mellon University

  • Christopher Jozwiak

    ALS, LBNL, Berkeley, Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Advanced Light Source, E.O. Lawerence Berkeley National Laboratory, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA

  • Eli Rotenberg

    ALS, LBNL, Berkeley, Lawrence Berkeley National Laboratory, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA

  • Aaron Bostwick

    ALS, LBNL, Berkeley, Lawrence Berkeley National Lab, Lawrence Berkeley National Laboratory, Advanced Light Source, LBNL, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA

  • Simranjeet Singh

    Carnegie Mellon University

  • Jyoti Katoch

    Carnegie Mellon University