Fractional quantum anomalous Hall effect in multilayer graphene
ORAL · Invited
Abstract
Rhombohedral graphene (RG), with its unique electronic properties, has emerged as a versatile platform for exploring a wide range of topological and correlated phenomena. In its pristine form, RG hosts a pair of flat bands that touch at zero energy, giving rise to correlated electron phenomena, which can be further tuned by applying an electric field. Additionally, when electron correlation breaks isospin symmetry, the valley-dependent Berry phase at zero energy can lead to the formation of topologically non-trivial states. Recent studies have shown that multilayer RG can support exotic states, including superconductivity, correlated insulator, and Chern insulator. By placing transition metal dichalcogenides in proximity to RG, spin-orbit coupling can be induced, leading to the realization of the quantum anomalous Hall effect with a large Chern number (C = ±5) at temperatures up to 1.5 Kelvin, without the need for magnetic elements or moiré superlattices—this represents a significant departure from previous experimental approaches. Furthermore, aligning RG with an adjacent hexagonal boron nitride (hBN) layer to induce a moiré potential generates narrow minibands with non-trivial topology. In a pentalayer RG/hBN moiré superlattice, the fractional quantum anomalous Hall effect (FQAHE) has been observed at temperatures of a few hundred milli-Kelvin, sparking discussions regarding the underlying mechanisms and the influence of moiré effects. At even lower electron temperatures, two additional FQAH states and reduced longitudinal resistance (Rxx) have been observed in pentalayer RG/hBN moiré superlattices compared to previous reports. Simultaneously, a new extended quantum anomalous Hall (EQAH) state has been detected, characterized by a Hall resistance (Rxy) of h/e2 and vanishing Rxx, spanning a wide range of filling factors (ν) from 0.5 to 1.3, coexisting with the FQAH states. The rich array of emergent quantum phenomena in the RG family, particularly the coexistence of FQAHE and superconductivity, offers an ideal platform for investigating charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field.
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Publication: 1. T Han, et al. Nature, 623, 41-47 (2023)<br>2. T Han, et al. Nature Nanotechnology, 19, 181-187 (2024)<br>3. Z Lu, et al. Nature, 626, 759-764 (2024)<br>4. T Han, et al. Science, 384, 647-651 (2024)<br>5. Z Lu, et al. arXiv, 2408.10203 (2024)<br>6. T Han, et al. arXiv, 2408.15233 (2024)
Presenters
Zhengguang Lu
Massachusetts Institute of Technology, Florida State Univeristy, Massachusetts Institute of Technology
Authors
Zhengguang Lu
Massachusetts Institute of Technology, Florida State Univeristy, Massachusetts Institute of Technology
Tonghang Han
Massachusetts Institute of Technology
Yuxuan Yao
Rice university, Massachusetts Institute of Technology
Zach J Hadjri
Massachusetts Institute of Technology
Jixiang Yang
Massachusetts Institute of Technology
Junseok Seo
Massachusetts Institute of Technology
Lihan Shi
Massachusetts Institute of Technology, Princeton University
Shenyong Ye
Massachusetts Institute of Technology
Kenji Watanabe
National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science
Takashi Taniguchi
National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science