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Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

POSTER

Abstract

The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusiveand the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56*10^10 A/m2 at 300K and a large SOT effective field efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices.

Publication: 2024, advanced material, title: Robust Field-Free Switching Using Large Unconventional Spin-Orbit Torque in an All-Van der Waals Heterostructure

Presenters

  • Zhang Yiyang

    The Hong Kong University of Science and Technology (HKUST), HKUST

Authors

  • Zhang Yiyang

    The Hong Kong University of Science and Technology (HKUST), HKUST

  • XIAOLIN REN

    The Hong Kong University of Science and Technology (HKUST), HKUST

  • Ruizi Liu

    The Hong Kong University of Science and Technology (HKUST), HKUST

  • Zehan Chen

    The Hong Kong University of Science and Technology (HKUST), HKUST

  • XUEZHAO WU

    The Hong Kong University of Science and Technology (HKUST), HKUST

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Guoqiang Yu

    Chinese Academy of Sciences

  • Youguo Shi

    Institute of Physics, Chinese Academy of Sciences, Chinese Academy of Sciences

  • Guibin Lan

    Chinese Academy of Sciences

  • Wei Wang

    Nanjing Tech University (NanjingTech)

  • Jie Pang

    Chinese Academy of Sciences