Poster: Ni 2 Si thin films for Nano electronics applications

Thin films of the intermetallic ferromagnet Ni 2 Si (thickness from 50 nm) were

synthesized via molecular beam epitaxy. Investigation using X-ray diffraction shows the

expected hexagonal crystal structure. For the first time, we report on the magnetic

properties of this compound. Ni 2 Si is a ferromagnet with magnetic order stable up to a

high Curie temperature. To investigate the electronic properties of the material, we

present a detailed look into the contributions to its longitudinal resistivity, which

indicates a half-metallic band structure. Additionally, for the first time, measurements of

the ordinary Hall resistivity and anomalous Hall conductivity were undertaken.