Growth of amorphous boron nitride through CVD process and control of properties according to growth conditions

In this paper, a large array resistive membrane device was manufactured by controlling the crystal characteristics of the film by controlling the growth conditions. The layered structure of the transition metal dichalcogenides(TMD) is structurally bounded, displays band gap, and has excellent optical and semiconduction properties that show silicon-like electron mobility, providing many new properties for various device application.

Resistant Random Access Memory (RRAM) is the next generation of nonvolatile memory types. It is a two-terminal resistance switching device with a metal/insulator/metal (MIM) vertical structure and is composed of Au/ a-BN /Au. Amorphous boron nitride (a-BN) is grown using ammonia borrane as a dielectric material. Changes in film state, dielectric thickness, and crystal structure were analyzed by controlling various growth conditions, and boron nitride characteristics were found to be obtained through Raman spectrometer measurement and TEM images