Characterization of Molybdenum Disulfide (MoS 2 ) Using Raman and UV-VIS Spectroscopy forOptoelectronic Applications
POSTER
Abstract
Atomically thin 2D-transitions metal dichalcogenides (TMDs) exhibit unique
optical, mechanical, and transport properties. Among the different types of 2D-
TMDs, monolayer MoS 2 has attracted enormous attention due to its non-zero
bandgap and absorption in the visible spectrum. We have investigated the optical
properties and thickness dependence of MoS₂ thin films using Raman and UV-VIS
spectroscopy. Our investigations reveal that the E 1 2g (in-plane) and A 1g (out-of-plane)
vibrational modes appear as Raman peaks between 384-387 cm⁻¹ and 403-408
cm⁻¹, respectively. The intensity ratio of the Raman peaks, approximately 1,
confirmed the monolayer structure of the sample. Furthermore, UV-VIS
spectroscopy was used to obtain the energy band gap of the MoS₂ thin films
through the Tauc plot method. A strong optical absorption feature at lower
wavelengths was observed near the ultraviolet region, indicating the material's
potential for photodetection and energy harvesting abilities at this wavelength.
These findings confirm the utility of combining Raman and UV-VIS spectroscopy for
characterizing MoS 2 samples and investigating its tunability, driven by its layer-
dependent band gap, and thereby making it useful for high-performance
optoelectronic applications, such as UV photodetectors and flexible electronics.
optical, mechanical, and transport properties. Among the different types of 2D-
TMDs, monolayer MoS 2 has attracted enormous attention due to its non-zero
bandgap and absorption in the visible spectrum. We have investigated the optical
properties and thickness dependence of MoS₂ thin films using Raman and UV-VIS
spectroscopy. Our investigations reveal that the E 1 2g (in-plane) and A 1g (out-of-plane)
vibrational modes appear as Raman peaks between 384-387 cm⁻¹ and 403-408
cm⁻¹, respectively. The intensity ratio of the Raman peaks, approximately 1,
confirmed the monolayer structure of the sample. Furthermore, UV-VIS
spectroscopy was used to obtain the energy band gap of the MoS₂ thin films
through the Tauc plot method. A strong optical absorption feature at lower
wavelengths was observed near the ultraviolet region, indicating the material's
potential for photodetection and energy harvesting abilities at this wavelength.
These findings confirm the utility of combining Raman and UV-VIS spectroscopy for
characterizing MoS 2 samples and investigating its tunability, driven by its layer-
dependent band gap, and thereby making it useful for high-performance
optoelectronic applications, such as UV photodetectors and flexible electronics.
Publication: No
Presenters
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SAUMIKA BANDOPADHYAY
Howard University
Authors
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SAUMIKA BANDOPADHYAY
Howard University
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Yugia Wang
Northeastern University
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Arun Bansil
Northeastern University
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Sugata Chowdhury
Howard University
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Kar Swastik
Northeastern University
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Prabhakar Misra
Howard University