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ns × nm imaging of current-induced domain wall dynamics at low current density

ORAL

Abstract

There have been numerous experimental and theoretical studies on the motion of magnetic domain walls (DW) under applied currents, and many attempts have been made to visualize the dynamics. DW motion at high current density (flow regime), dominated by current-induced spin torques, has been studied using various imaging techniques based on stop-motion method. However, far less focus has been given to low current density (pinned and creep regime), where the effects of DW pinning become pronounced, and as a result cannot be effectively captured unless using time-resolved imaging techniques.

In this study, we investigate current-induced DW dynamics in room-temperature ferromagnetic (Fe0.63Ni0.3Pd0.07)3P by utilizing time-resolved Lorentz TEM imaging based on ultrafast electron microscopy, at spatiotemporal resolution better than 40 nm and 2 ns. Under the injection of pulsed current with a duration of 100 ns, transient DW displacement is observed, which can be interpreted as the interplay between spin-transfer torque and pinning. DW displacement elevates drastically from a few nanometers to tens of nanometers once a specific threshold current density is exceeded, suggesting the transition from pinned to creep regime. By examining the transient process of DW motion, we identified non-trivial behaviors appearing at current density slightly above the threshold. In this presentation, we will discuss the mechanism behind these nonlinear dynamics.

Presenters

  • Dongxue Han

    RIKEN Center for Emergent Matter Science (CEMS); Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo

Authors

  • Dongxue Han

    RIKEN Center for Emergent Matter Science (CEMS); Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo

  • Asuka Nakamura

    RIKEN Center for Emergent Matter Science, RIKEN Center for Emergent Matter Science (CEMS); Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo

  • Takahiro Shimojima

    RIKEN Center for Emergent Matter Science, RIKEN Center for Emergent Matter Science (CEMS); Department of Physics, Nagoya Univ.

  • Kosuke Karube

    RIKEN, RIKEN Center for Emergent Matter Science (CEMS)

  • Yasujiro Taguchi

    RIKEN, RIKEN CEMS, RIKEN Center for Emergent Matter Science (CEMS)

  • Yoshinori Tokura

    RIKEN Center for Emergent Matter Science (CEMS), Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Univ of Tokyo, The University of Tokyo, RIKEN Center for Emergent Matter Science (CEMS), Tokyo college, The University of Tokyo, RIKEN Center for Emergent Matter Science (CEMS); Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo; Tokyo College, Univ. of Tokyo, RIKEN Center for Emergent Matter Science (CEMS), Department of Applied Physics, Quantum-Phase Electronics Center (QPEC) and Tokyo College, University of Tokyo

  • Kyoko Ishizaka

    Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, RIKEN Center for Emergent Matter Science (CEMS); Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), Univ. of Tokyo, Quantum-Phase Electronics Center, School of Engineering, The University of Tokyo, Univ. of Tokyo