Off-State Magnetoresistance in Long-Channel Germanium Schottky-Barrier MOSFETs

An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction’s tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky barrier MOSFETs with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 Tesla magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate-source and drain-source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Lastly, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. This large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo- detection, and for high bias, low leakage MOSFETs.



This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE, Office of Basic Energy Sciences user facility. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525. The views expressed here do not necessarily represent the views of the DOE or the U.S. Government.