Site-selective droplet epitaxy of InAs quantum dots

Droplet epitaxy growth of InAs/GaAs quantum dots (QDs) offers greater freedom of growth parameters such as density and size variations through independent supply of the group III and V elements. By pre-patterning the GaAs surface with electron beam lithography to create nanometer-scale periodic features, we trend towards deterministic site-selective nucleation of the Indium droplets and subsequent InAs QDs after the group V supply. In-situ hydrogen cleaning is employed before reintroducing the patterned sample into the MBE growth chamber. These InAs/GaAs QDs are developed to reach towards microwave-optical transduction.