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Defects in Wide and Ultrawide Band Gap Materials

FOCUS · MAR-L43 · ID: 3110653

Presentations

  • Compensating defects and mechanisms in AlN and AlGaN

    ORAL · Invited

    –

    Publication: D. Wickramaratne et al, Phys. Rev. Materials 8, 094602 (2024).

    Presenters

    • Mary Ellen Zvanut

      University of Alabama at Birmingham

    Authors

    • Mary Ellen Zvanut

      University of Alabama at Birmingham

    • Shafiqul I Mollik

      UNIVERSITY OF ALABAMA AT BIRMINGHAM

    • Jason I Forbus

      University of Alabama at Birmingham, UNIVERSITY OF ALABAMA AT BIRMINGHAM

    View abstract →

  • Impact of Aluminum Content on Neutral Donor States in Undoped Bulk AlN and Si-doped AlGaN Investigated by EPR

    ORAL

    –

    Publication: Impact of Aluminum Content on Neutral Donor States in Undoped Bulk AlN and Si-doped AlGaN Investigated by EPR (Planned paper)

    Presenters

    • Md Shafiqul Islam Mollik

      University of Alabama at Birmingham, AL, USA

    Authors

    • Md Shafiqul Islam Mollik

      University of Alabama at Birmingham, AL, USA

    • Jackson P Hanle

      University of Alabama at Birmingham, AL, USA

    • Mary Ellen Zvanut

      University of Alabama at Birmingham

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  • Symmetric Injection of Electrons and Holes in III-Nitrides LEDs through Point Defect Engineering: Ab Initio Nonadiabatic Molecular Dynamics Study

    ORAL

    –

    Publication: Solving the Asymmetric Carriers Injection in III-Nitrides LEDs by Point Defect Engineering: Ab Initio Nonadiabatic Molecular Dynamics Study (planned)<br>Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in III-Nitrides (planned)<br>Enhancing Carrier Injection Symmetry in InN/GaN Quantum Wells through Point Defect Engineering: Accelerated Hot Electron Cooling via Ab Initio Insights (planned)

    Presenters

    • Yuxin Yang

      The University of Chinese Academy of Sciences (UCAS)

    Authors

    • Yuxin Yang

      The University of Chinese Academy of Sciences (UCAS)

    • Zhiming Shi

      CIOMP, University of Chinese Academy of Sciences

    • Dabing Li

      CIOMP, University of Chinese Academy of Sciences

    • Xiaojuan Sun

      CIOMP, University of Chinese Academy of Sciences

    • Suhuai Wei

      Eastern Institute of Technology, Ningbo

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  • Oral: Unraveling the transformation pathway of the β to γ phase transition in Ga<sub>2</sub>O<sub>3</sub> from atomistic simulations

    ORAL

    –

    Presenters

    • Channyung Lee

      University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign

    Authors

    • Channyung Lee

      University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign

    • Mike Scarpulla

      The University of Utah

    • Joel Basile Varley

      Lawrence Livermore National Laboratory

    • Elif Ertekin

      University of Illinois at Urbana-Champaign

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  • 2D small hole polarons in Ga<sub>2</sub>O<sub>3</sub> nanolayers

    ORAL

    –

    Presenters

    • Hartwin Peelaers

      University of Kansas

    Authors

    • Hartwin Peelaers

      University of Kansas

    • Joel Basile Varley

      Lawrence Livermore National Laboratory

    • Chris G Van de Walle

      University of California, Santa Barbara, Materials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.

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  • Radiation-induced anion-vacancy dynamics in wide-band-gap semiconductors for power devices.

    ORAL

    –

    Presenters

    • Haardik Pandey

      Department of Physics and Astronomy, Vanderbilt University

    Authors

    • Haardik Pandey

      Department of Physics and Astronomy, Vanderbilt University

    • Grant Mark Mayberry

      Department of Physics and Astronomy, Vanderbilt University, Vanderbilt University

    • Demos Negash

      Vanderbilt University, Department of Physics and Astronomy, Vanderbilt University

    • Dennis R Ball

      Department of Electrical and Computer Engineering, Vanderbilt University, Vanderbilt University

    • Ronald D Schrimpf

      Department of Electrical and Computer Engineering, Vanderbilt University, Vanderbilt University

    • Daniel M Fleetwood

      Department of Electrical and Computer Engineering, Vanderbilt University

    • Sokrates T Pantelides

      Vanderbilt University, Department of Physics and Astronomy, Vanderbilt University

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  • First-principles investigation of donor-acceptor pairs in proximity of silicon carbide surfaces

    ORAL

    –

    Publication: Bilgin, A. et al. Donor-acceptor pairs in wide-bandgap semiconductors for quantum technology applications. npj Comput. Mater. (2024)

    Presenters

    • Anil Bilgin

      University of Chicago

    Authors

    • Anil Bilgin

      University of Chicago

    • Ian Newton Hammock

      University of Chicago

    • Hannes Bernien

      UChicago

    • Alexander A High

      The University of Chicago, University of Chicago

    • Giulia Galli

      University of Chicago

    View abstract →