Magnetotransport properties in CeGaGe

There is considerable interest in materials that host topologically protected electronic states for next generation technologies. Particular attention is being paid to new materials that may host such states and that also feature magnetic moments where interplay between topological electrons and magnetic moments can be studied and perhaps manipulated. With this motivation we have grown single crystals of CeGaGe using several methods. The crystal structure is non-centrosymmetric, similar to the structure of several related compounds that host topological electronic states [1-4]. Here, we present measurements of the longitudinal magnetoresistance and Hall resistance in the potential Weyl semimetal CeGaGe and discuss the interplay of electronic states and Ce 4f electrons.

[1] L. Scanlon et al, In preparation (2024)

[2] G. Chang et al, Phys. Rev. B 97, 041104 (2018).

[3] H. Hodovanets et al, Phys. Rev. B 98, 245132 (2018).

[4]. D. Ram et al, Phys. Rev. B 108, 024428 (2023).