Electrical Gating of Charge-Density-Waves in Nanowires of Quasi-1D van der Waals Materials

We report on the field-effect modulation of the charge-density-wave condensate in the top-gated devices with quasi-one-dimensional NbS₃ and TaS₃ nanowire channels. The nanowires were exfoliated from the crystals grown by the chemical vapor transport method. The test structures were fabricated using electron beam lithography. The charge-density-wave phases and collective current in quasi-1D NbS₃ nanowires were verified via temperature dependence of the resistivity, non-linear current-voltage characteristics, and Shapiro-like steps that appear in the device response under radio frequency excitation mixed with the DC bias [1]. It was found that the electric field of the applied gate bias can reversibly modulate the collective current of the sliding charge-density-wave condensate. The collective current in NbS₃ nanowires reduces with more positive bias suggesting a surface effect on the condensate mobility. At low source-drain biases, the single-particle current shows small amplitude fluctuation behavior. We compare the strength of electrical gating of charge density waves in nanowires of different quasi-1D van der Waals materials. [1] M. Taheri, N. Sesing, T. T. Salguero, and A. A. Balandin, Appl. Phys. Lett., 123, 233101 (2023). A.A.B. acknowledges VBFF support via N00014-21-1-2947.