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Microwave Reflectometry for van der Waals 2D materials and heterostructures (Part-1): Methodology

ORAL

Abstract

Two-dimensional materials like twisted graphene, monolayers/bilayers of transition metal dichalcogenides, and their integer/fractional quantum Hall states offer exciting new platforms for realizing strongly correlated electron physics. The extreme gate-voltage tunability of these systems allows them to be driven through cascades of quantum phases, including correlated superconductors, quantum magnets, correlated/topological insulators and metals. In this talk, we will present microwave reflectometry measurements adapted for 2D materials heterostructures. We demonstrate that our experimental scheme allows us to measure gate-voltage dependent inductive and capacitive responses of micron-sized mesoscopic devices constructed from these novel materials. Apart from enabling measurements of fundamental quantities such as superfluid stiffness, quantum geometry, quasiparticle lifetime, and collective mode dynamics, that shed fresh light on the correlated electron problem, these investigations open a path toward ultra-fast logic devices and novel quantum technologies exploiting quantum correlations.

Publication: arXiv:2406.13742

Presenters

  • Abhishek Banerjee

    Harvard University

Authors

  • Abhishek Banerjee

    Harvard University

  • Zeyu Hao

    Harvard University

  • Terry S Phang

    Harvard University

  • Grace Chen

    Harvard University

  • Zhongying Yan

    Harvard University

  • Thomas R Werkmeister

    Harvard University

  • Andres M Mier Valdivia

    Harvard University

  • Philip Kim

    Harvard University