Microwave Reflectometry for van der Waals 2D materials and heterostructures (Part-1): Methodology
ORAL
Abstract
Two-dimensional materials like twisted graphene, monolayers/bilayers of transition metal dichalcogenides, and their integer/fractional quantum Hall states offer exciting new platforms for realizing strongly correlated electron physics. The extreme gate-voltage tunability of these systems allows them to be driven through cascades of quantum phases, including correlated superconductors, quantum magnets, correlated/topological insulators and metals. In this talk, we will present microwave reflectometry measurements adapted for 2D materials heterostructures. We demonstrate that our experimental scheme allows us to measure gate-voltage dependent inductive and capacitive responses of micron-sized mesoscopic devices constructed from these novel materials. Apart from enabling measurements of fundamental quantities such as superfluid stiffness, quantum geometry, quasiparticle lifetime, and collective mode dynamics, that shed fresh light on the correlated electron problem, these investigations open a path toward ultra-fast logic devices and novel quantum technologies exploiting quantum correlations.
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Publication: arXiv:2406.13742
Presenters
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Abhishek Banerjee
Harvard University
Authors
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Abhishek Banerjee
Harvard University
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Zeyu Hao
Harvard University
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Terry S Phang
Harvard University
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Grace Chen
Harvard University
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Zhongying Yan
Harvard University
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Thomas R Werkmeister
Harvard University
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Andres M Mier Valdivia
Harvard University
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Philip Kim
Harvard University