Molecular Beam Epitaxy Synthesis of WS<sub>2</sub> Monolayers on Graphitic Substrates
ORAL
Abstract
Monolayer WS2 is a 2D semiconductor with promising applications in future generations of
electronic and optical devices. To date, several methods have successfully demonstrated
preparation of monolayer WS2, including top-down methods such as exfoliation and bottom-up
methods such as chemical vapor deposition. In this work, we report on the Molecular Beam
Epitaxy (MBE) synthesis of monolayer WS2 on graphitic substrates. Furthermore, we use
Scanning Tunneling Microscopy (STM) to provide insight into the growth kinetics, epitaxial
registry with the underlying substrate, formation of grain boundaries, and presence of point
defects.
electronic and optical devices. To date, several methods have successfully demonstrated
preparation of monolayer WS2, including top-down methods such as exfoliation and bottom-up
methods such as chemical vapor deposition. In this work, we report on the Molecular Beam
Epitaxy (MBE) synthesis of monolayer WS2 on graphitic substrates. Furthermore, we use
Scanning Tunneling Microscopy (STM) to provide insight into the growth kinetics, epitaxial
registry with the underlying substrate, formation of grain boundaries, and presence of point
defects.
–
Presenters
-
Andrew Murphy
University of Texas at Austin
Authors
-
Andrew Murphy
University of Texas at Austin
-
Hyunsue Kim
University of Texas at Austin
-
Yanxing Li
University of Texas at Austin
-
Fan Zhang
University of Texas at Austin
-
Lisa Frammolino
University of Texas at Austin
-
Chih-Kang Shih
University of Texas at Austin