Engineering electronic and magnetic properties in the centrosymmetric kagome magnets RMn₆Sn₆

RMn₆Sn₆ compounds, where R denotes a rare earth element, a class of three-dimensional materials featuring a kagome lattice of magnetic elements. In these compounds, Mn atoms form a kagome network within the basal plane of a hexagonal lattice. These materials exhibit a diverse range of magnetic structure driven by competing energy scales, including interlayer nearest-neighbour and next-nearest-neighbour exchange interactions. Such interactions can be tuned via external perturbations, such as magnetic fields or chemical doping, leveraging the crystal structure's inherent flexibility.

Particularly, doping studies, such as the partial subsitution of Sn atoms in RMn₆Sn₆ compounds, reveal intriguing magnetic and transport properties. In this presentation, I will discuss how Ge doping in YMn₆Sn₆ induces sensitivity in its magnetic phases, as demonstrated by magnetization and magnetotransport measurements, neutron diffraction experiment, and theoritical calculations. Specifically, the magnetic structure of YMn₆Sn₄Ge₂, determined through neutron diffraction, reveals an incommensurate staggered magnetic spiral with a slightly larger pitch that the parent compound YMn₆Sn₆. This alteration in the magnetic structure significantly influnces the Fermi surface topology, thereby enhancing the out-of-plane conductivity.

Additionally, I will highlight findings from doping studies on other members of the RMn₆Sn_6-xGa_x family, focusing on anomalous Hall conductivity and the engineering of chiral spin textures.