Robustness of Spin Torque Oscillators to Ionizing Radiation

Spin torque oscillators hold great potential for enabling ultra-high-density memory, on-chip wireless communication, and brain-inspired neuromorphic computing. The magnetic tunnel junction, a core component of these devices, has been shown to be robust to large total ionizing dose effects when used in ST-MRAM, making it particularly appealing for space and nuclear applications. However, the effects of ionizing radiation on the auto-oscillatory dynamics and injection locking of these devices remain largely unexplored. In this study, we present measurements of the effects of high-dose gamma irradiation on spin torque oscillators based on magnetic tunnel junctions. We examine both the free-running auto-oscillatory behavior and injection locking at 1f and 2f under gamma irradiation. Our results show that the critical properties of spin torque oscillators relevant for device applications remain robust in the presence of gamma irradiation and high total ionizing doses.