Exploring the electric field effect in bilayer CrSBr

CrSBr hosts both interesting electronic and magnetic properties. Electronically, it has a nearly one-dimensional conduction band, which is considered to contribute to its exceptional exciton properties. Magnetically, it has a fairly high magnetic onset temperature while having a relatively small magnetic anisotropy. Moreover, in even-layer CrSBr, the layered antiferromagnetic order breaks both the spatial inversion (P) and time reversal (T) symmetries, but preserves their product, i.e., PT symmetric. For these considerations, we are curious about its response in the electric field effect device, introducing both free carriers to dope the quasi-1D conduction band and out-of-plane electric field to couple with the PT symmetric magnetism. In this presentation, we will show our experimental effort on using rotation anisotropy second harmonic generation (SHG) to track the magnetic evolution in bilayer CrSBr, as a function of the gating voltage. We will further use scanning SHG imaging to investigate the spatial various of the magnetic phases under the electric gating. Our results will showcase the electric device engineering of 2D magnets.