Integration of perovskite based transparent conducting oxides on industrial substrates: the key role of the glass substrate properties and binary oxides seed layers

The discovery of conductivity and transparency in strongly correlated metals of the ABO₃ type has paved the way for the development of a new generation of indium-free transparent conducting oxides (TCOs). SrVO₃ (SVO) perovskite oxide has demonstrated comparable electrical and optical properties compared to Indium-Tin-Oxide (ITO), the standard material for TCO devices. Integrating these new TCOs materials on low-cost substrates for large-scale production remains a technological challenge because of the necessity of a compatible growth template for the crystalline growth of this new generation of TCOs, in contrast to ITO, which can be grown easily on industrial substrates and yet has suitable properties while being amorphous.

In this presentation, we introduce an innovative approach to the integration of SVO thin films onto industrial substrates, such as glass or silicon. Our method uses a TiO₂ seed layer to facilitate growth and enhance crystalline quality of SVO films. The resulting thin films are polycrystalline in nature, exhibiting remarkably low electrical resistivity of about 400 µΩ.cm and good optical transparency exceeding 70%. These characteristics underline the immense potential of these films for a wide range of electronic applications. Furthermore, our study also focuses on the intricate interplay between the chemical and thermal properties of the substrate, specifically glass, and their influence on the properties of SVO thin films. A deeper understanding of these substrate properties not only contributes to optimizing the growth process but also highlights the critical role of the substrate in achieving the desired properties of these new TCOs materials.