Fabrication and Low-Temperature Transport Studies of LaAlO₃/SrTiO₃ Micro-Membranes for Silicon-Integrated Nanoelectronics

Freestanding oxide micro-membranes offer an interesting new platform for exploring functionalities of the electron system and for integrating oxide electronics with silicon-based architectures. Recent developments in fabrication of self-formed LaAlO3/SrTiO3 (LAO/STO) heterostructure micro-membranes by spalling [1] have demonstrated metallic conductivity and the emergence of a superconducting phase at ultra-low temperatures [2]. Here we present an extended fabrication process for high-yield [3] LAO/STO micro-membrane devices on silicon, where we develop and optimize contacts to spalled micro-membranes and discuss the possibilities for integrating local electrostatic top and botton gates. At low temperatures, the micro-membranes exhibit a two-dimensional superconducting phase, confirmed through magneto-transport measurements. These results highlight the potential of spalled LAO/STO micro-membranes for integrating oxide nanoelectronics with silicon technologies and shed light on the properties of the interface electron system.