Coexistence of 2D hole and 3D electron in a topological insulator candidate: T' - WSe2.
ORAL
Abstract
Here, we present the gap state and thermal activated charge transport in the few-layer (FL) T'-WSe2, exfoliated from a topological semimetal 2M-WSe2 bulk crystal. In contrast to its hexagonal counterpart with bandgap of 1.7 eV, FL T'- WSe2 shows metallic behavior at high temperature and presents a gap with size of meV. Further, we will discuss the band gap closing behavior with the displacement field.
We then present the landau fan diagram in bi-layer T'-WSe2 with magneto transport studies under perpendicular magnetic field up to 42 T. At the high field, the longitudinal resistance evolves to quantum oscillation and enters the quantum hall state with Rxx = 0 at the hole side. On the other hand, the electron side shows quantum oscillation and landau level crossing at high doping density. Finally, we will discuss the LL degeneracy and spin-orbit coupling in FL T'- WSe2.
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Publication: None
Presenters
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Yangchen He
University of Wisconsin - Madison
Authors
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Yangchen He
University of Wisconsin - Madison
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Alex Strasser
Texas A&M University College Station
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Zizhong Li
University of Wisconsin-Madison, University of Wisconsin - Madison
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Takashi Taniguchi
National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science
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Kenji Watanabe
National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science
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Luis M Balicas
National High Magnetic Field Laboratory, Florida State University, National High Magnetic Field Laboratory
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Xiaofeng Qian
Texas A&M University, Texas A&M University College Station
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Daniel Rhodes
University of Wisconsin - Madison, University of Wisconsin Madison