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Erasure conversion in integer fluxonium qubits

ORAL

Abstract

Integer fluxonium is a promising high-coherence single-mode qubit. In integer fluxonium the ground (g) and second excited (f) states make up another long-lived but inherently leaky qubit where the dominant error, which is amplitude damping from f to the first excited (e) state, can be converted to erasure by detecting population in e via dispersive readout . At the same time the qubit state in g-f subspace is weakly affected when the dispersive shifts from g and f states are matched. Because the g-f transition is forbidden by parity, elaborate gate designs are needed to operate this qubit which could potentially spoil the erasure-dominant error structure. We propose a method to make gates on g-f integer fluxonium erasure-dominant. In Raman X gate for example, large detuning suppresses intermediate state decay that causes undetectable amplitude damping, while additional leakage detection on higher fluxonium levels converts stray population from off-resonant excitation to erasure. We also discuss how 2-qubit gates on g-f integer fluxonium traversing via intermediate states can also maintain an error structure dominated by erasure.

Presenters

  • Jiakai Wang

    University of Wisconsin - Madison

Authors

  • Jiakai Wang

    University of Wisconsin - Madison

  • Raymond A Mencia

    Federal Institute of Technology (EPFL), EPFL

  • Vladimir E Manucharyan

    Ecole Polytechnique Federale de Lausanne, Federal Institute of Technology (EPFL), EPFL

  • Maxim G Vavilov

    University of Wisconsin - Madison