The fractional quantum spin Hall effect in moiré semiconductors

Electron fractionalization is of significant interest to both fundamental physics and topological quantum computing. The emergence of two-dimensional moiré materials provides a platform to explore the physics of electron fractionalization under zero magnetic field. In this talk, I will discuss the realization of a fractional quantum spin Hall insulating state in small-angle twisted bilayer MoTe2 (a transition metal dichalcogenide semiconductor). I will also discuss recent experimental evidence of time-reversal symmetry breaking in this state of matter.