Tracking the evolution of self-crossing points in memristive I-V characteristics

A memristive device has an internal resistance which depends on the history of the applied voltage signal. The device produces a pinched hysteresis loop in its current-voltage (I-V) characteristic due to a process known as resistive switching (RS).

Along with the crossing at the origin, additional crossings may appear throughout the loop. Our computational model simulates the nonlinear current-voltage response of the memristive device subject to a sinusoidal voltage signal. We then take advantage of the decomposition of the solution using the Chebyshev polynomials to perform parametric analysis, furthering our understanding of how specific parameters influence the appearance of additional crossings. From there, the integration of a transformation parameter allows for a continuous transition of the voltage signal towards a symmetric triangular pulse. Finally, a second transformation parameter is added to shift towards an asymmetric triangular signal.

Using this approach allows us to determine how variations to the voltage signal influence hysteresis in a memristive device. We classify different types of hysteresis based on the effects of different combinations of parameters, both intrinsic and extrinsic, on the number of crossings and overall appearance of the loop.