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Accessing ultralow thermal conductivity in chalcogen perovskite CaSnS<sub>3</sub>: Harnessing wave-like phonon tunnelling and significant anharmonicity

POSTER

Abstract

There has been an endless stream of possible candidates developed by the quest for high-performance thermoelectric materials; however, materials with intrinsically low lattice thermal conductivity are especially desirable [1]. In this study, we looked at the new emerging perovskite family: chalcogen perovskite CaSnS3 in orthorhombic phase for intrinsically low lattice thermal conductivity (κl) [2]. The structural and mechanical properties suggest the ionic-covalent bond and ductile nature. The direct semiconducting band gap of 1.7 eV is noticed and could avoid the bipolar effect. The interatomic interactions in CaS8 bicapped trigonal prism geometry are noticed weak, leading to the bond heterogeneity and thus an effective anharmonicity that facilitates the low κl. Phonon transport and lattice thermal conductivity are significantly impacted by the strong anharmonicity caused by the bond heterogeneity in the crystal structure. Combining the quartic anharmonicity-based self-consistent phonon theory and the unified theory of lattice thermal transport employing particle and wavelike propagation of phonons, a lower value of average lattice thermal conductivity at 300 K is found at ~ 1.18 W m-1K-1, while at 800 K it further reduces to a lower value of ~ 1.0 W m-1K-1. Our findings emphasize the relevance of lattice anharmonicity and wave-like tunnelling of phonons in thermal transport in chalcogen perovskite.

Publication: [1] D. T. Crane and J. W. Lagrandeur, Progress Report on BSST-Led US Department of Energy Automotive Waste Heat Recovery Program, Journal of Electronic Materials 39, 2142 (2010).<br>[2] J. Xi, W. Zhu, X. Li, D. Jiang, R. Dronskowski, and X. Shi, Discovery of High-Performance Thermoelectric Chalcogenides through Reliable High-Throughput Material Screening, Journal of the American Chemical Society 140, 10785 (2018).

Presenters

  • Surbhi Ramawat

    Indian Institute of Technology Jodhpur Rajasthan India

Authors

  • Surbhi Ramawat

    Indian Institute of Technology Jodhpur Rajasthan India