Combined First-Principles and Micromagnetic approach for strain tuning skyrmion stability in in B20 Compounds

Conventional memory devices are constrained by high volatility, elevated power demands, and limited operational speeds. Consequently, research has pivoted toward topological magnetic defects, with particular focus on skyrmions, stabilized by chiral interactions in non-centrosymmetric materials. These nanoscale, soliton-like structures exhibit exceptional stability and can be easily nucleated and annihilated, making them ideal candidates for next-generation data storage and logic devices due to their capacity for high information density. However, their stability is susceptible to defects, which induce local strain fields and in-turn can introduce anisotropic Dzyaloshinskii-Moriya interaction (DMI). This study employs first-principles calculations to explore the impact of mechanical strain on skyrmion stability in B20 compounds, simulating strain conditions that mimic defect environments. Through this investigation, we aim to elucidate the intricate correlation between strain, DMI anisotropy and skyrmion stability, establishing strain engineering as an effective approach for precisely tuning skyrmion properties, advancing their potential for future memory and spintronic technologies.