Mapping Electric Fields in Twisted WSe<sub>2</sub> Ferroelectrics
ORAL
Abstract
Moiré superlattice systems formed by stacking two or more van der Waals materials can be used to create devices with unique electronic and optical properties. With atomic-scale thicknesses, such devices are ideal for study with scanning transmission electron microscopy (STEM). Unfortunately, while STEM can reveal physical structure with high resolution, it struggles to visualize electronic properties. Here, we use STEM to image capacitors consisting of twisted WSe2 encapsulated by graphite electrodes and hBN. The devices exhibit sliding moiré ferroelectricity that we switch in situ. We map the local electric fields using STEM electron beam-induced current (EBIC) imaging, which gives a picture of the device that complements the one determined by 4D STEM.
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Presenters
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Tristan O'Neill
University of California, Los Angeles
Authors
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Tristan O'Neill
University of California, Los Angeles
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Yueyun Chen
University of California, Los Angeles
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Ho Leung Chan
University of California, Los Angeles
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Madeline Van Winkle
University of California, Berkeley
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Kwabena Bediako
University of California Berkeley
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Brian Christopher Regan
University of California, Los Angeles