Silicon Color Center LED Design Variations to Optimize Electroluminescence
ORAL
Abstract
Silicon color center light-emitting diodes (CC-LEDs) were fabricated and measured with various design parameters to stimulate CC electroluminescence and determine how the variations affect the efficiency. The design parameters that were varied across our devices include (1) the separation between the n-type and p-type regions, (2) the width of the ohmics, and (3) the width of the windows where the ions are implanted for CC formation. The objective is to determine how these three design parameters impact the resulting electro-optical properties of the devices. Two types of CCs, W- and G-centers, were studied, which show different trends for the brightness of the light they emit as a function of the ohmic separation. This talk will discuss the design splits, the implications on the brightness for assessing CC-LED performance and how this correlates to the electroluminescence.
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Presenters
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Nikki Ebadollahi
University of Maryland College Park
Authors
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Nikki Ebadollahi
University of Maryland College Park
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Christian Pederson
University of Maryland, College Park, University of Maryland, College Parl
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Vijin K Veetil
University of Maryland Baltimore County, University of Maryland, Baltimore
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Marcelo Davanco
National Institute of Standards and Technology (NIST), NIST
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Pradeep N Namboodiri
National Institute of Standards and Technology (NIST), NIST
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Kartik A Srinivasan
National Institute of Standards and Technology (NIST)
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Aaron M Katzenmeyer
National Institute of Standards and Technology (NIST), NIST
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Matthew A Pelton
University of Maryland Baltimore County
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Joshua M Pomeroy
National Institute of Standards and Technology (NIST)