Electrically injected telecom single photon source with a spin-photon interface in silicon

Quantum communication and distributed quantum computing protocols can be performed with linked spin-photon interfaces, using an optical network for entanglement distribution. Silicon colour centres are candidates for scalable quantum technologies which benefit from compatibility with existing silicon electronics and photonics technologies. The silicon T centre is a promising spin-photon interface which operates in the telecommunications O-band and hosts long-lived electronic and nuclear spins. In this work we study the behaviour of the T centre in nanophotonic devices with lateral p-i-n diodes. We evaluate single cavity-coupled centres and waveguide-coupled ensembles, and explore the effects of charge injection and depletion. We operate these devices as an electrically-triggered source of single photons, demonstrate spin state initialization by single-photon heralding, and evaluate hybrid electrical-optical control schemes. Finally, we investigate the T centres charge under band bending and compare with recent simulations. These results show that the T centre can be integrated with electronic and nanophotonic devices, enabling new methods of control and advancing the T centre's viability for scalable quantum technologies.