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Towards Probing Quantum Many-Body Phases in Bilayer Graphene Using Large Quantum Dots

ORAL

Abstract

The exploration of quantum many-body phases in Bernal bilayer graphene reveals a rich landscape of tunable quantum phenomena, with potential applications in advanced quantum devices.[1][2] Despite the significant interest in this area, using quantum dots to probe the quantum phases has been limited, which is essential in controlling the level of degeneracy towards the realization of qudit states. Here we present our work using a gate-defined quantum dot with a relatively large size, which gives a higher density resolution during the sequential addition of carriers.[3] The larger size of the dot also reduces the energy level spacing, enabling the investigation of phases with small energy scales. We tune the dot to the large density region where many carriers are present and quantum many-body phases form inside the dot. By applying magnetic fields, the Coulomb peak trajectories versus gate voltage enable the magnetism of the varying phases to be identified, yielding evidence for valley magnetic phases. This approach is readily adaptable to explore the properties of tunable many-body phases in other systems such as twisted bilayer graphene.



[1] Zhou, et al. Science 375.6582 (2022): 774-778.

[2] Koh, et al. arXiv:2407.09612 (2024).

[3] Banszerus, et al. Nano letters 18.8 (2018): 4785-4790.

Presenters

  • Pengcheng Luan

    Ohio State University

Authors

  • Pengcheng Luan

    Ohio State University

  • Nicholas Mazzucca

    Ohio State University, Department of Physics, The Ohio State University

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Fan Zhang

    University of Texas at Dallas

  • Marc Bockrath

    Ohio State University