Electric dipole spin resonance in industrially fabricated spin qubit

We demonstrate electric dipole spin resonance (EDSR) control of single electron spins in devices fabricated using the single-layer etch-defined gate electrode (SLEDGE) process on Si/SiGe heterostructures. The SLEDGE process allows the fabrication of densely packed quantum dot arrays whereby gate electrodes are patterned on a single plane and contacted vertically using vias, which can be fanned out through multiple back-end-of-line layers [1]. Our previous characterization of the performance of SLEDGE devices has focused on coherent control of exchange-only spin qubits, which are operated exclusively using baseband voltage pulses [2]. Here we demonstrate that SLEDGE devices are also compatible with single spin qubits that are electrically driven at frequencies ranging from 5 – 20 GHz.



[1] W. Ha et al., “A Flexible Design Platform for Si/SiGe Exchange-Only Qubits with Low Disorder,” Nano Lett. 22, 1443 (2022).

[2] E. Acuna et al., “Coherent control of a triangular exchange-only spin qubit,” arXiv:2406.03705 (2024).



This work was supported by the Army Research Office grant nos. W911NF-24-1-0020 and W911NF-22-C-0022.