Improving Aluminum Oxide Synthesis for QIS devices

High quality aluminum oxide with exceptional charge stability is a critical material in nanoelectronics and QIS devices for Josephson junctions, shunt capacitor dielectrics, charge sensor tunnel barriers and inter-gate isolation. Using plasma oxidation and in situ metal processing and oxidation, we have demonstrated low drift, high charge stability aluminum oxide and incorporated it into single electron transistors (SETs) for charge sensing. However, improving SET bandwidth and incorporating this material for other applications requires extending the range of the RA product (resistance times area) to both higher and lower values. This talk will report on the various fabrication schemes used to provide test devices for extending the RA product range range, the RA product versus the duration of the oxidation, measurements of the charge stability and discuss implications for the possible applications.