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Extreme doping of graphene at high crystalline order

ORAL

Abstract

We study in-plane charge transport in ultrathin dual-gated heterostructures with monolayer and bilayer graphene in proximity with α-RuCl3: by analyzing quantum oscillations in modulation doped graphene, we demonstrate doping hysteresis and population of the second electronic subband in bilayer graphene, where the low disorder in devices allows us to resolve asymmetric lifting of spin and valley degeneracy of holes. Contingent upon availability of new data, we show experimental results on ultrahigh doping using a single-crystalline high-κ dielectric.

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Presenters

  • Dmitry L Shcherbakov

    Carnegie Mellon University, Washington University in St. Louis

Authors

  • Dmitry L Shcherbakov

    Carnegie Mellon University, Washington University in St. Louis

  • Matthew Aaron Cothrine

    University of Tennessee

  • David G Mandrus

    University of Tennessee

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Erik Henriksen

    Washington University, St. Louis

  • Benjamin M Hunt

    Carnegie Mellon University