Bi<sub>2</sub>S<sub>3</sub> nanosheets: A promising anisotropic two-dimensional semiconductor for polarisation-dependent optoelectronics
ORAL
Abstract
Birefringence, an inherent optical property of anisotropic materials, enables manipulation of light propagation properties for various photonic and optoelectronic applications including waveplates and liquid crystal displays. However, birefringence effects directly depend on the magnitude of optical path and consequently are usually negligible in atomically thin anisotropic two-dimensional materials. [1,2] In this work we show that nanometric Bi2S3 flakes, exhibit strong anisotropic in-plane optical properties, which provides for birefringence values as high as Dn=0.08 at wavelengths around 1050 nm. Ellipsometry, angle resolved photoemission measurements, and Density functional theory calculations allowed us to identify electronic transitions responsible of the anisotropic optical response of this material revealing, collaterally, that this material presents a notably high exciton oscillator strength. Birefringence values of Bi2Se3 are larger than those observed in ReSe2 and ReS2 nanosheets, although lower than those obtained in the less stable material Black Phosphorus. [3] These results are promising in view of the applications of Bi2S3 nanomaterials in photonics and optoelectronics.
[1] Xu Li, et al., Laser & Photonics Reviews 15, 2100322 (2021).
[2] Guo, Q., et al. Nat. Photon. (2024).
[3] H. Yang, et al. ACS Photonics 4, 3023–3030 (2017).
[1] Xu Li, et al., Laser & Photonics Reviews 15, 2100322 (2021).
[2] Guo, Q., et al. Nat. Photon. (2024).
[3] H. Yang, et al. ACS Photonics 4, 3023–3030 (2017).
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Publication: Highly anisotropic Bi2S3 for polarisation-dependent optoelectronic device applications, in preparation
Presenters
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Juan Francisco Sanchez Royo
University de Valencia
Authors
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Juan Francisco Sanchez Royo
University de Valencia
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Daniel Andrés Penares
Universidad de Valencia
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Mauro Brotons-Gisbert
Heriot-Watt University
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Mahesh Eledath Changarath
Universidad de Valencia
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Alejandro Molina-Sanchez
University de Valencia, Universitat de Valencia