Quantized charge pumping in 22nm FDSOI CMOS foundry device.

Utilising the scale of the silicon industry to produce commercial nanoscopic quantum devices has been a long-standing goal of many research efforts. One of the goals is to realize the quantum ampere which can be used for the realization of SI ampere. Here, we utilise a device made in a commercial 22nm node FDSOI CMOS and operate two devices in the same chip as quantized current sources. We operate the devices in a two-quantum dot regime and utilise a previously explored charge transport scheme for dual quantum does [1]. We achieve current plateaus at frequencies up to 100 MHz in both devices at temperatures of 1.5K. Future aims include reaching metrologically relevant currents (~nA) by parallelizing the pumps like the ones we are using [2].

[1] B. Roche et al. Nat. Commun. 4 1581 (2013).

[2] A. Dash et al. IEEE Xplore pp. 1-2 (2024)