I~V Characterization of Crosswire Quantum Dots in Graphene

We present the fabrication and characterization of quantum dots (QDs) in a crosswire architecture patterned on a monolayer graphene sheet using electron beam lithography. The geometric confinement of this crosswire structure is expected to result in two discrete electronic states separated from a continuum [1,2]. To investigate the properties of these structures, we perform electrical transport measurements. The current-voltage (I~V) characteristics clearly demonstrate the presence of Coulomb blockade. We analyze our I~V data in search of distinct energy levels aiming at quantitative values for threshold voltages, capacitances and level spacings for various widths of single layer Graphene nano-ribbons. The geometrically tunable level spacing of these QDs offers a promising platform for a wide range of high temperature Qubit applications.



[1] R. L. Schult, D. G. Ravenhall, and H. W. Wyld Phys. Rev. B 39, 5476(R) (1989)

[2] A F Sadreev Rep. Prog. Phys. 84 055901 (2021)