Electrically Detected Magnetic Resonance of Implanted Spin Defects in Silicon Carbide for Quantum Magnetometry

Quantum Sensing is an emerging field of potentially game changing impact to NASA missions with a strong need for self-calibrating, low Size, Weight, And Power (SWAP) magnetometer maturation for Heliophysics and Planetary Science. However, prevailing methodologies employed for the measurement of magnetic fields have encountered significant limitations. Consequently, innovative techniques that leverage spin defects as quantum resources have recently gained prominence in the scientific community, offering new avenues for exploration and advancement in the field of quantum magnetometry. NASA's Quantum Sensing And Spin Physics (Q-SASP) lab is leading device research on fundamental aspects of quantum spin and molecular magnetic resonance. This work discusses analysis of low-field magnetic resonance and hyperfine-induced singlet-triplet mixing through Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field MagnetoResistance (NZFMR) spectroscopy in Silicon Carbide (SiC) diode pn junctions for use in quantum magnetometry. Through optimization of bias and modulation amplitude an effective magnetic field device sensitivity of =13.2 nT∕√Hz was achieved. Maximum rate of triplet-singlet transition was observed at 0 magnetic field opening possibility for absolute magnetometry. Bias dependence on hyperfine-induced spin mixing was observed. Possible mechanisms for this phenomenon will be discussed with applications towards absolute magnetometry and spintronics.