Electric field-controlled magnon transport in magnetoelectric antiferromagnet

The interplay between the spin and charge degrees of freedom is an extremely exciting area of research, from both a fundamental science and an applications perspective, and has the potential to revolutionize the world of computing. Magnon-based memory computing is the most energy-efficient process due to its ability to avoid Joule heating during information transfer. Additionally, magnetoelectric materials offer an additional degree of freedom by allowing magnetization control through an electric field. Magnetoelectric spin-orbit (MESO) logic has been proposed as a low-energy alternative to recent magnetic and static random-access memories. In this talk, I will discuss our recent research progress on a non-volatile, non-destructive memory design utilizing a magnon-driven sensing of the antiferromagnetic state in the multiferroic. This design leverages strong spin-orbit coupling of spin Hall metal to achieve large output voltages through spin-charge conversion. By employing a simple geometric configuration, we introduce a new MESO non-volatile magnetic memory capacitive element as a promising alternative to existing random access memory technology. I will also discuss the recent development of MESO and possible pathway to understand the existing issues with materials engineering with open challenges for future research.