Leveraging Quantum Emitters embedded in pn diodes via Advanced Optimization Algorithms

Designing solid-state quantum emitters with narrow linewidth is key for indistinguishable single photon sources and the consequent scaling up of quantum networks. Electromagnetic noise within semiconductors introduces uncertainty in the emitter’s energy levels, which manifests as an undesirable broadening of the emission line shape. Strategies such as embedding quantum emitters in pn-diodes help not only to reduce the optical linewidth, but also regulate charge states and emission frequency [1-3]. Given the multitude of parameters affecting the quantum emitter system (e.g. diode dimensions, profiles, densities and emitter position), it is crucial to determine which parameters yield near transform-limited linewidth of emitters, while respecting the system constraints, such as dielectric breakdown and light-matter interaction strength. In this work, we apply our scaled-gradient descent optimization formalism to rare-earth ions and self-assembled quantum dot emitters embedded in diodes. By accounting for all critical physical properties of the system, we provide an insight into designing low-linewidth diode-embedded emitters compatible with near-term experiments.

[1] F.T Pedersen, et al, ACS Photonics 7, 2343 (2020)

[2] C.P Anderson et al, Science 366, 1225 (2019)

[3] D.R Candido et al, PRX Quantum 2, 040310 (2021)