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Temperature and Magnetic field dependent relaxation dynamics of Boron-Vacancy centers in Hexagonal Boron Nitride

ORAL

Abstract

The negatively charged boron-vacancy center (VB-) in hexagonal boron nitride (hBN) has garnered substantial interest in recent years. The two-dimensional structure of hBN and its seamless integration with other van der Waals materials offer exciting possibilities for ultrathin, in-situ quantum sensors. To harness the unique properties of (VB-) centers, it is crucial to understand the physical characteristics of these defects. In this presentation, we explore the temperature and magnetic field-dependent spin relaxation times of (VB-) centers and their implications for practical quantum sensing. We further investigate the underlying phonon-related processes that influence the spin-relaxation rates. Additionally, we also discuss the impact of spin-spin interactions in a dense ensemble of spin defects.

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Presenters

  • Abhishek Bharatbhai Solanki

    Purdue University

Authors

  • Abhishek Bharatbhai Solanki

    Purdue University

  • Hamza Ather

    Purdue University

  • Aravindh Shankar

    Purdue University

  • Owen Matthiessen

    Elmore Family School of Electrical and Computer Engineering, Birck Nanotechnology Center,Purdue University, Purdue University

  • Xingyu Gao

    Purdue University

  • Demid Sychev

    Purdue University

  • Alexei S Lagoutchev

    Purdue University

  • Tongcang Li

    Purdue University

  • Yong P Chen

    Purdue University; Aarhus University, Purdue University

  • Vladimir M Shalaev

    Purdue University, Elmore Family School of Electrical and Computer Engineering,Birck Nanotechnology Center, Purdue University, Elmore Family School of Electrical and Computer Engineering, Purdue Quantum Science and Engineering Institute,Birck Nanotechnology Center, Purdue University

  • Benjamin J Lawrie

    Oak Ridge National Laboratory

  • Pramey Upadhyaya

    Purdue University