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Van Hove singularities in large angle twisted bilayer transition metal dichalcogenides

ORAL

Abstract

Twisted bilayer transition metal dichalcogenides are known to host flat electronic bands for small twist angles (close to 0° or 60°). These flat bands generally owe their origin to structural reconstructions in the large-area moiré patterns. Here, using first principles calculations we study the emergence of unique Van Hove singularities in large twist-angle bilayers where structural reconstruction is absent. These singularities originate from band flattening in a region of the moiré Brillouin zone and potentially occur only at certain twist-angles. We study the evolution of the electronic band structure with twist-angle in various transition metal dichalcogenide bilayer systems to arrive at a predictive model for these Van Hove singularities.

Presenters

  • Mit H. Naik

    University of California, Berkeley, University of Texas at Austin

Authors

  • Mit H. Naik

    University of California, Berkeley, University of Texas at Austin

  • Giovanny Espitia

    The University of Texas at Austin