Millimeter-Scale TNS Nanowire Growth for Electronics and Photonics

We present a high-yield, solid-state synthesis method for producing single-crystal Ta₂Ni₃Se₈ (TNS) nanowires, which show great potential for advancing molecular electronics and photonic technologies. These nanowires, composed of molecular chains held together by weak van der Waals (vdW) interactions, retain their crystallinity even when thinned to nanometer scales, making them ideal for nanoscale devices. Our approach focuses on the efficient synthesis of TNS nanowires, achieving lengths of several millimeters and aspect ratios as high as 10,000, exhibiting excellent scalability and yield. The nanowires' exfoliability and chemically inert surfaces allow for seamless integration into devices without compromising structural integrity. They can be aligned on a wafer-scale using a soft-lock drawing technique, and further mechanical exfoliation produces nanometer-thick, chemically stable nanowires under ambient conditions. Schottky devices fabricated on individual TNS nanowires exhibit uniform electrical contact properties across their entire length, ensuring reliability in electronics and sensor applications. Overall, our solid-state growth method provides a scalable and efficient solution for integrating 1D vdW nanowires into next-generation semiconductor technologies, enabling the combination of high-performance electronic and photonic devices with silicon and CMOS platforms.