Scalable quantum technologies with T centres in silicon

Scaling quantum technologies requires overcoming key challenges in distributing high-quality entanglement for both quantum computing and networking. Silicon-based platforms provide advantages for scalable quantum architectures by leveraging existing semiconductor manufacturing processes, integrated photonic circuits for optical interconnects, and compatibility with global telecommunications infrastructure [1]. The silicon T centre, with its telecommunications-band optical emission, long electron and nuclear spin coherence [2], and direct photonic integration, provides a spin-photon interface for high-fidelity, high-speed distributed quantum computing. The precise control of T centres for distributed entanglement demands an advanced understanding of their physical properties. This talk will present new insights into the T centre, including a detailed Hamiltonian of its ground- and bound exciton- state, refined parameters of its spin-selective optical transitions, and the first measurements of electrically tuned emission [3]. These results, derived from spectroscopy, density functional theory, and existing data, establish the fundamental spectroscopic properties required to operate T centres for quantum computing.

[1] S. Simmons, PRX Quantum, 5(1), 010102 (2024).

[2] L. Bergeron et al., PRX Quantum, 1(2), 020301 (2020).

[3] C. Clear et al., "Optical-transition parameters of the silicon T center." Physical Review Applied 22(6), 064014 (2024).