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Oral: Strain tunable magnetotransport in Mn<sub>3</sub>Si<sub>2</sub>Te<sub>6</sub>

ORAL

Abstract

Tuning physical properties under external stimuli has been proven to be an effective way to explore the novel functionality of the material. Among all the stimuli, strain is one of the most accessible control knobs. In this context van der Waals (vdW) materials, due to their extraordinary mechanical properties, are suitable candidates. Recently, the discovery of unconventional Colossal magnetoresistance (CMR) in quasi-layered Mn3Si2Te6 has inspired the research community to explore its functionality under various conditions, including current, gating, doping, and pressure.

In this work, we present our recent observations of magnetotransport of Mn3Si2Te6 device, fabricated on flexible substrate. By bending these devices, we were able to apply the strain of varying magnitudes. We measured the temperature dependence of magnetotransport under different strain strengths. Our results show that strain can effectively control the unconventional CMR in Mn3Si2Te6. This study will help to understand the underlying mechanisms of such unconventional CMR as well as provides the direction for the development of strain-engineered CMR devices.

Presenters

  • Abdul Ahad

    Institute for Solid State Physics, The University of Tokyo, Kashiwa, Univ of Tokyo

Authors

  • Abdul Ahad

    Institute for Solid State Physics, The University of Tokyo, Kashiwa, Univ of Tokyo

  • Miuko Tanaka

    Univ of Tokyo, Institute for Solid State Physics, The University of Tokyo, Kashiwa

  • Tenta Kitamura

    Dept. of Physics, Institute of Science Tokyo, Tokyo

  • Hao Ou

    Dept. of Physics, Institute of Science Tokyo, Tokyo

  • Jiang Pu

    Dept. of Physics, Institute of Science Tokyo, Tokyo

  • Toshiya Ideue

    Institute for Solid State Physics, The University of Tokyo, Kashiwa, Univ of Tokyo