Effect of transferred electrode on optical properties of MoS₂-FETs analyzed by hyperspectral imaging

We investigated the impact of the device fabrication process on the optical properties of monolayer molybdenum disulfide (MoS₂) devices, a promising 2D semiconductor for next-generation electronics. Monolayer MoS₂ was grown by metal-organic chemical vapor deposition (MOCVD). Dry transfer and CF₄ plasma etching methods were employed to fabricate MoS₂ field-effect transistors (FETs). For electrode deposition, we compared two methods: direct deposition using an evaporator and transferred electrodes using dry transfer. Photoluminescence (PL) proved to be a powerful characterization tool, as it is highly sensitive to changes in doping levels, strain, and defects within the MoS₂ layers. However, while confocal PL is a popular method for analyzing 2D materials, it has limitations when capturing spectral information from multiple positions simultaneously. To overcome this, we employed hyperspectral line imaging, which enabled us to measure PL spectra from hundreds of different points across the MoS₂ FETs, which allows for statistical analysis of material properties. This work provides insight into the effects of fabrication processes on MoS₂, which is crucial for improving device performance.