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Direct measurement of terahertz conductivity in a gated monolayer semiconductor

ORAL

Abstract

Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.

Publication: arXiv:2409.17633

Presenters

  • Sudi Chen

    University of California, Berkeley

Authors

  • Sudi Chen

    University of California, Berkeley

  • Qixin Feng

    University of California, Berkeley

  • Wenyu Zhao

    University of California, Berkeley

  • Ruishi Qi

    University of California, Berkeley

  • Zuocheng Zhang

    University of California, Berkeley

  • Dishan Abeysinghe

    University of California, Berkeley

  • Can Uzundal

    University of California, Berkeley

  • Jingxu Xie

    Lawrence Berkeley National Laboratory

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • feng wang

    University of California, Berkeley