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Broken symmetry quantum Hall states, layer hybridization and screening effects in twisted bilayer graphene at intermediate angles

ORAL

Abstract

Twisted bilayer graphene (TBLG) at intermediate twist angles ( ), forms a bilayer two-dimensional electron/hole gas system with sub-nm layer separation, in which the momentum mismatch between the Dirac cones of individual layers leads to a breakdown of interlayer coherence. This removes the layer degree of freedom from the spin and valley degrees of freedom of individual layers resulting in eight-fold degeneracy in the Landau levels (LL). The longitudinal magnetoresistance (Rxx) minima and the corresponding QH plateaus were observed at total filling factors, νtot, similar to Bernal-stacked BLG, but with magnetic field, B-dependent LL crossings at large νtot. The charge carrier imbalance between the top and bottom layers due to partial screening of the gate field leads to filling of LLs of each layer as determined by the compressibility of the bottom layer and the charging energy of the top layer. At low filling factors the broken symmetry QH states were observed where the spin, valley and layer degeneracies are broken, with a QH insulator state emerging at νtot = 0. In addition to these, a notable B-dependent hysteresis emerged in the gate voltage sweeps of Rxx from the charge localization in individual layers manifesting in asymmetric charge distribution between the layers. These results provide a comprehensive understanding of layer hybridization, screening and charge localization in the QH states of twisted bilayer graphene at intermediate twist angles.

Presenters

  • Vidya Kochat

    Materials Science Centre, IIT Kharagpur, West Bengal-721302, India, IIT Kharagpur, Indian Institute of Technology Kharagpur

Authors

  • Vidya Kochat

    Materials Science Centre, IIT Kharagpur, West Bengal-721302, India, IIT Kharagpur, Indian Institute of Technology Kharagpur

  • Vineet Pandey

    Indian Institute of Technology Kharagpur

  • Prasenjit Ghosh

    Materials Science Centre, IIT Kharagpur, West Bengal-721302, India, Indian Institute of Technology Kharagpur

  • Riju Pal

    Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata-700106, India, S. N. Bose National Centre for Basic Sciences

  • Atindra N Pal

    Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Kolkata-700106, India, S. N. Bose National Centre for Basic Sciences

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science