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Investigating the twist-angle dependence of Bernal bilayer-trilayer graphene

ORAL

Abstract

Recent studies have established twisted Bernal bilayer-trilayer graphene as a rich platform for investigating correlation-driven topological states formed within a moiré superlattice. A particular highlight is the discovery of a highly tunable integer quantum anomalous Hall state arising at band filling ν = 1/4, along with additional Chern insulators associated with ν = 1/3, 1/2, 2/3, and 3/2 that form in modest magnetic fields. The appearance of these states at commensurate fractional fillings of the moiré bands strongly suggests that they are formed by spontaneously breaking the discrete translational symmetry of the superlattice. Such states thus correspond to moiré-driven topological electronic crystals, featuring enlarged unit cells. However, the dependence of these states on the twist angle between the bilayer and trilayer graphene constituents is currently unknown. In this talk, I will present transport measurements helping to fill in this gap by studying twisted bilayer-trilayer graphene across a range of twist angles from < 1° to 1.7°. These measurements reveal a rich set of symmetry-broken phases that depend sensitively on twist angle, motivating the possibility of uncovering intriguing new topological phases of matter in this platform.

Presenters

  • Derek Waleffe

    University of Washington

Authors

  • Derek Waleffe

    University of Washington

  • Manish Arun Kumar

    University of Washington

  • Aryana Bhattacharya

    University of Washington

  • Raveel Tejani

    University of British Columbia, University of British Cooumbia

  • Silvia Lüscher

    University of British Columbia

  • Dacen Waters

    University of Denver

  • Ruiheng Su

    University of British Columbia

  • Eric Maginnis

    University of Washington

  • Kenji Watanabe

    National Institute for Materials Science, NIMS, Research Center for Functional Materials, National Institute for Materials Science, Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    National Institute for Materials Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan, Advanced Materials Laboratory, National Institute for Materials Science

  • Joshua Folk

    University of British Columbia

  • Matthew A Yankowitz

    University of Washington